Amorphous silicon thin-film transistor backplanes deposited at 200 °C on clear plastic for lamination to electrophoretic displays

IEEE/OSA Journal of Display Technology

Volumn 3, Issue 3, 2007, Pages 304-308

  Kattamis, Alex Z ^a   Cheng, I Chun ^a   Long, Ke ^a   Hekmatshoar, Bahman ^a   Cherenack, Kunigunde H ^a   Wagner, Sigurd ^a   Sturm, James C ^a   Venugopal, Sameer M ^b   Loy, Douglas E ^b   O'Rourke, Shawn M ^b   Allee, David R ^b  

^a Princeton University   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

Amorphous silicon thin film transistor (a Si:H TFT); Clear plastic; Electrophoretic display; Flexible; Stability

Indexed keywords

AMORPHOUS SILICON; ELECTROPHORESIS; LAMINATING; PLASTICS;

CLEAR PLASTICS; ELECTROPHORETIC DISPLAYS;

THIN FILM TRANSISTORS;

EID: 34548068362     PISSN: 1551319X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JDT.2007.900935     Document Type: Article

References (11)

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