Observation of type-I and type-II excitons in strained SiSiGe quantum-well structures

Applied Physics Letters

Volumn 91, Issue 7, 2007, Pages

  Wang, K Y ^a   Huang, W P ^a   Cheng, H H ^a   Sun, G ^b   Soref, R A ^c   Nicholas, R J ^d   Suen, Y W ^e,f  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b UNIVERSITY OF MASSACHUSETTS BOSTON   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

^d UNIVERSITY OF OXFORD   (United Kingdom)

^e NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^f NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

LUMINESCENT DEVICES; MAGNETIC FIELDS; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS;

ENERGY SHIFT; INTERNAL STRAIN DISTRIBUTIONS; STRAIN ENGINEERING;

EXCITONS;

EID: 34548039505     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2771094     Document Type: Article

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