Effect of reaction temperature and time on the structural properties of Cu (In, Ga) Se2 thin films deposited by sequential elemental layer technique

Journal of Materials Science and Technology

Volumn 23, Issue 4, 2007, Pages 499-503

  Riaz, Saira ^a   Naseem, Shahzad ^a  

^a UNIVERSITY OF THE PUNJAB   (Pakistan)

Author keywords

Cu (In, Ga) Se2 (CIGS); Structural analysis; Thin films; X ray Diffraction

Indexed keywords

CHEMICAL REACTIONS; COPPER; GALLIUM; GRAIN SIZE AND SHAPE; INDIUM; PHASE TRANSITIONS; SELENIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; STRAIN; STRUCTURAL ANALYSIS; TEMPERATURE; THIN FILMS;

COMPOUND FORMATION; COPPER INDIUM GALLIUM SELENIDE (CIGS); MICROSTRAIN; PREPARATION; REACTION TEMPERATURE; REACTION TIME; SEQUENTIAL ELEMENTAL LAYER DEPOSITION;

STRUCTURAL PROPERTIES;

EID: 34547979664     PISSN: 10050302     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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