Highly stable a-Si:H TFT pixel for large area AMOLED by employing both Vth storing and the negative bias annealing

Digest of Technical Papers - SID International Symposium

Volumn 38, Issue 1, 2007, Pages 165-168

  Lee, Jae Hoon ^a   Park, Hyun Sang ^a   Choi, Sung Hwan ^a   Lee, Won Kyu ^a   Han, Min Koo ^a   Goh, Joon Chul ^b   Choi, Joonhoo ^b   Chung, Kyuha ^b  

^a Seoul National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; PIXELS; THIN FILM TRANSISTORS;

CURRENT STABILITY; ELECTRICAL STRESS;

ORGANIC LIGHT EMITTING DIODES (OLED);

EID: 34547906478     PISSN: 0097966X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1889/1.2785254     Document Type: Conference Paper

References (7)

1. A.Nathan, et al, "Amorphous silicon thin film transistor circuit integration for organic LED displays on glass and plastic", IEEE Journal of solid-state circuits, vol. 39, pp. 1477-1486, 2004.
2. G.R.Chaji, et al, "Driving scheme for stable operation of 2-TFT a-Si AMOLED pixel", IEEE Electron Device Letters, vol.26, pp.737-739, Oct.2005.
3. J.L.Sanford, et al, "TFT AMOLED pixel circuits and driving methods", Journal of the SID, vol.12, pp.65-73, 2004.
4. J.H.Lee, J.H.Kim and M.K.Han, "A new a-Si:H TFT pixel circuit compensating the threshold voltage shift of a-Si:H TFT and OLED for active matrix OLED", IEEE Electron Device Letters, vol.26, pp.897-899, Dec. 2005.
5. M.J.Powell, "Time and temperature dependence of instability mechanisms in amorphous silicon thin-film transistors", Appl.Phys.Lett., vol. 54, pp. 1323-1325, 1989.
6. B.H.You, J.H.Lee, and M.K.Han, IEEE Journal of Display, to be published.
7. J.H.Lee, S.G.Park and M.K.Han, JJAP, to be publish