Imaging of interference between incident and reflected electron waves at an InAs/GaSb heterointerface by low-temperature scanning tunneling spectroscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 4 B, 2007, Pages 2618-2621

  Suzuki, Kyoichi ^a   Kanisawa, Kiyoshi ^a   Perraud, Simon ^a,b   Ueki, Mineo ^c   Takashina, Kei ^a   Hirayama, Yoshiro ^a,d,e  

^a NTT Basic Research Laboratories   (Japan)

^b CNRS   (France)

^c NTT CORPORATION   (Japan)

^d JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^e TOHOKU UNIVERSITY   (Japan)

Author keywords

Cleaved surface; Electron interference; Local density of states; Scanning tunneling spectroscopy; Semiconductor heterostructure

Indexed keywords

GALLIUM COMPOUNDS; IMAGING TECHNIQUES; INDIUM COMPOUNDS; SCANNING TUNNELING MICROSCOPY; WAVE INTERFERENCE;

CLEAVED SURFACE; ELECTRON INTERFERENCE; LOCAL DENSITY OF STATES; SEMICONDUCTOR HETEROSTRUCTURE;

HETEROJUNCTIONS;

EID: 34547906175     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.2618     Document Type: Article

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