Development of microwave-excited plasma-enhanced metal-organic chemical vapor deposition system for forming ferroelectric Sr2(Ta 1-x,Nbx)2O7 thin film on amorphous SiO2

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 4 B, 2007, Pages 2200-2204

  Takahashi, Ichirou ^a   Funaiwa, Kiyoshi ^a   Azumi, Keita ^a   Yamashita, Satoru ^a   Shirai, Yasuyuki ^a   Hirayama, Masaki ^a   Teramoto, Akinobu ^a   Sugawa, Shigetoshi ^a   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Development of MOCVD system; Ferroelectric crystallization on amorphous insulator; Microwave excited plasma MOCVD; Radical oxygen; Sr2(Ta1 x,Nbx)2o7 (STN)

Indexed keywords

FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; MAGNETIC MULTILAYERS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROWAVES; STRONTIUM COMPOUNDS;

FERROELECTRIC CRYSTALLIZATION; FERROELECTRIC-MULTILAYER-STACK (FMLS) DEPOSITION; RADICAL OXYGEN;

FERROELECTRIC FILMS;

EID: 34547895549     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.2200     Document Type: Article

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