Effect of Sn doping on the thermoelectric properties of ErNiSb-based p -type half-Heusler compound

Applied Physics Letters

Volumn 91, Issue 6, 2007, Pages

  Kawano, Kenta ^a   Kurosaki, Ken ^a   Sekimoto, Takeyuki ^a   Muta, Hiroaki ^a   Yamanaka, Shinsuke ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; SEMICONDUCTOR DOPING; THERMAL CONDUCTIVITY; THERMOELECTRICITY;

HALF-HEUSLER COMPOUND; SN-DOPING;

TIN COMPOUNDS;

EID: 34547850717     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2769398     Document Type: Article

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