Growth mechanism of indium tin oxide whiskers prepared by sputtering

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 6 A, 2007, Pages 3537-3544

  Takaki, Satoru ^a   Aoshima, Yuki ^a   Satoh, Ryohei ^b  

^a ASAHI GLASS CO LTD   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

DC magnetron sputtering; Indium oxide; ITO; Supersaturation; Transition mode; VLS growth mechanism; Whisker

Indexed keywords

CRYSTAL WHISKERS; CRYSTALLIZATION; SPUTTERING; SUPERSATURATION;

DC MAGNETRON SPUTTERING; INDIUM OXIDE; TRANSITION MODE; VLS GROWTH MECHANISM;

INDIUM COMPOUNDS;

EID: 34547838217     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.3537     Document Type: Article

References (15)

1. L. V. Vu and N. N. Long: Proc 9th Asia Pacific Physics Conf. (9th APPC), Hanoi, Vietnam, 2004.
2. Y. Q. Chen, J. Jiang, B. Wang, and J. G. Hou: J. Phys. D 37 (2004) 3319.
3. F. Zeng, X. Zhang, J. Wang, L. Wang, and L. Zhang: Nanotechnology 15 (2004) 596.
4. H. Sugata, S. Ohshio, and H. Saitoh: Jpn. J. Appl. Phys. 42 (2003) 2786.
5. S. Takaki, Y. Aoshima, and R. Satoh: Jpn. J. Appl. Phys. 45 (2006) 2714.
6. S. Nishikawa: Thin Solid Films 135 (.1986) 219.
7. S. Maniv and W. D. Westwood: Surf. Sci. 100 (1980) 108.
8. S. Maniv, C. Miner, and W. D. Westwood: J. Vac. Sci. Technol. 18 (1981) 195.
9. S. Maniv, C. J. Miner, and W. D. Westwood: J. Vac. Sci. Technol. A 1 (1983) 1370.
10. R. S. Wagner and W. C. Ellis: Appl. Phys. Lett. 4 (1964) 89.
11. D. J. Barber: Philos. Mag. 10 (1964) 75.
12. H. Hashimoto, T. Naiki, T. Eto, and K. Fujiwara: Jpn. J. Appl. Phys. 7 (1968) 946.
13. H. Hashimoto and A. Kumao: J. Cryst. Growth 7 (1970) 113.
14. G. W. Sears: Acta Metall. 3 (1955) 361.
15. G. W. Sears: Acta Metall. 3 (1955) 367.