Electroluminescent and electrical characteristics of polar and nonpolar InGaN/GaN light-emitting diodes at low temperature

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 10 A, 2006, Pages 7661-7666

  Masui, Hisashi ^a,b   Schmidt, Mathew C ^a,b   Chakraborty, Arpan ^a   Nakamura, Shuji ^a,b   DenBaars, Steven P ^a,b  

^a University of California   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Electroluminescence (EL); Light emitting diode (LED); Low temperature (LT) measurement; Nonpolar plane GaN; Polarization induced internal electric field

Indexed keywords

ELECTRIC PROPERTIES; ELECTROLUMINESCENCE; GALLIUM NITRIDE; POLARIZATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE MEASUREMENT;

INTERNAL ELECTRIC FIELDS; LOW TEMPERATURE (LT) MEASUREMENT; NONPOLAR PLANES;

LIGHT EMITTING DIODES;

EID: 34547828623     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.7661     Document Type: Article

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