Performance of InGaN-GaN LEDs fabricated using glue bonding on 50-mm Si substrate

IEEE Photonics Technology Letters

Volumn 18, Issue 4, 2006, Pages 613-615

  Peng, Wei Chih ^a   Wu, Yew Chung Sermon ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Glue bonding; InGaN GaN; Laser liftoff; Light emitting diodes (LEDs)

Indexed keywords

BONDING AGENT; FORWARD CURRENTS; GAN LEDS; GAN LIGHT-EMITTING DIODES; GLUE BONDING; HIGH TEMPERATURE; INGAN LED; INJECTION CURRENTS; LASER LIFT-OFF; LASER LIFT-OFF TECHNOLOGIES; LIGHT OUTPUT; ORGANIC FILMS; RADIATION PATTERNS; SI SUBSTRATES;

DIODES; EPITAXIAL FILMS; GALLIUM ALLOYS; GALLIUM NITRIDE; GLUES; GLUING; LIGHT EMISSION; ORGANIC LIGHT EMITTING DIODES (OLED); SAPPHIRE; SUBSTRATES;

LIGHT EMITTING DIODES;

EID: 34547825876     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2006.870190     Document Type: Article

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