Growth and characterization of single-phase metastable tantalum nitride nanocrystals by dc arc discharge

Journal of Crystal Growth

Volumn 306, Issue 2, 2007, Pages 413-417

  Lei, Weiwei ^a   Liu, Dan ^a   Shen, Longhai ^a   Zhang, Jian ^a   Zhu, Pinwen ^a   Cui, Qiliang ^a   Zou, Guangtian ^a  

^a JILIN UNIVERSITY   (China)

Author keywords

A1. Characterization; A1. Nanostructures; A2. Single crystal growth; B1. Nanomaterials; B1. Nitrides; B2. Semiconductor materials

Indexed keywords

CRYSTAL GROWTH; NITRIDES; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

DC ARC DISCHARGE; DIRECT PREPARATION; GROWTH MECHANISM; SINGLE CRYSTAL GROWTH;

NANOCRYSTALS;

EID: 34547734418     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.05.010     Document Type: Article

References (22)

1. Toth L.E. Refractory Materials, Vol. 7: Transition Metal Carbides and Nitrides (1971), Academic Press, New York p. 12
2. Niewa R., and DiSalvo F.J. Chem. Mater. 10 (1998) 2733
3. Chuang J., and Chen M. Thin Solid Films 322 (1998) 213
4. H. Sorimachi, M. Tarashima, K. Sato, T. Ikeda, T. Mohi, in: IEEE CHMT Symposium Proceedings, 1984, p. 110.
5. Takeyama M., Noya A., Sase T., and Ohta A. J. Vac. Sci. Technol. B 14 (1996) 3263
6. Eda K., Miwa T., Taguchi Y., and Uwano T. IEEE Trans. Microwave Technol. Tech. 38 (1990) 1949
7. Papaconstantopoulos D.A., Pickett W.E., Klein B.M., and Boyer L.L. Phys. Rev. B 21 (1985) 752
8. Qin Y., Liu L., and Chen L. J. Alloys Compds. 269 (1998) 238
9. Yeh C.L., Liu E.W., and Chang Y.C. J. Eur. Ceram. Soc. 24 (2004) 3807
10. Mashimo T., Tashiro S., Nishida M., Miyahara K., and Eto E. Physica B 239 (1997) 13
11. Kieffer R., Ettmayer P., Freundhofmeier M., and Gatter J. Monatsh. Chem. 102 (1971) 483
12. Matsumoto O., and c M. J. Less-Common. Met. 60 (1978) 147
13. Shi L., Yang Z.H., Chen L.Y., and Qian Y.T. Solid State Commun. 133 (2005) 117
14. Gillan E.G., and Kaner R.B. Inorg. Chem. 33 (1994) 5693
15. Zhang Q.Y., Mei X.X., Yang D.Z., Chen F.X., Ma T.C., Wang Y.M., and Teng F.N. Nucl. Instrum. Methods B 127 (1997) 664
16. Zhou M.F., and Andrews L. J. Phys. Chem. A 102 (1998) 9061
17. Hector A.L., Henshaw G., Komarov A.V., and Parkin I.P. J. Mater. Process. Technol. 77 (1998) 103
18. Shen L.H., Cui Q.L., Zhang J., Li X.F., Zhou Q., and Zou G.T. Chin. Phys. Lett. 22 (2005) 3192
19. McKeilliget J.W., and Szekely J. J. Phys. D 16 (1983) 1007
20. Aithal S.M., Subramaniam V.V., Pagan J., and Richardson R.W. J. Appl. Phys. 84 (1998) 3506
21. Hsu K.C., Etemadi K., and Pfender E. J. Appl. Phys. 54 (1983) 1293
22. Stampfl C., and Freeman A.J. Phys. Rev. B 67 (2003) 064108