Indium antimonide based technology for RF applications

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2006, Pages 121-124

  Ashley, T ^a   Buckle, L ^a   Emeny, M T ^a   Fearn, M ^a   Hayes, D G ^a   Hilton, K P ^a   Jefferies, R ^a   Martin, T ^a   Phillips, T J ^a   Powell, J ^a   Tang, A W H ^a   Wallis, D ^a   Wilding, P J ^a  

^a QINETIQ   (United Kingdom)

Author keywords

FET; HEMT; Indium antimonide; InSb; Transistor

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRON MOBILITY; INDIUM; INTEGRATED CIRCUITS; SEMICONDUCTOR MATERIALS;

(OTDR) TECHNOLOGY; COMPOUND SEMICONDUCTOR (CS); CUT OFF FREQUENCY (FT); HIGH FREQUENCY OPERATIONS; INDIUM ANTIMONIDE; LOW-POWER DISSIPATION; RF APPLICATIONS; SATURATION VELOCITY; SOURCE-DRAIN VOLTAGES; UNCOOLED;

SEMICONDUCTING INDIUM;

EID: 34547706483     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2006.319918     Document Type: Conference Paper

References (2)

1. T. Ashley, A. R. Barnes, L. Buckle, S. Datta, A. B. Dean, M. T. Emeny, M. Fearn, D. G. Hayes, K. P. Hilton, R. Jefferies, T. Martin, K. J. Nash, T. J. Phillips, W. A. Tang, P. J. Wilding and R. Chau, Proc. 7th Int. Conf. Solid-State and Integrated Circuits Technology, 18-21 Oct. 2004, vol 3, 2253 (2004)
2. S. Datta, T. Ashley, J. Brask, L. Buckle, M. Doczy, M. T. Emeny, D. G. Hayes, K. P. Hilton, R. Jefferies, T. Martin, T. J. Phillips, D. Wallis, P. J. Wilding, and R. Chau, IEDM Technical Digest, 783 (2005)