Microstructure and electrical properties of vanadium-doped zinc oxide-based non-ohmic resistors

Solid State Communications

Volumn 143, Issue 10, 2007, Pages 453-456

  Nahm, C W ^a  

^a Dong Eui University   (South Korea)

Author keywords

A. Semiconductors; C. Grain boundaries; D. Electrical properties; D. ZnO V 2O5 Mn3O4 based non ohmic resistors

Indexed keywords

DOPING (ADDITIVES); ELECTRIC PROPERTIES; GRAIN BOUNDARIES; MICROSTRUCTURE; TERNARY SYSTEMS; VANADIUM COMPOUNDS;

ABNORMAL GRAIN GROWTH; NON-OHMIC COEFFICIENT; OHMIC RESISTORS;

RESISTORS;

EID: 34547687574     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2007.06.027     Document Type: Article

References (14)

1. Levinson L.M., and Philipp H.R. Amer. Ceram. Soc. Bull. 65 (1986) 639
2. Gupta T.K. J. Amer. Ceram. Soc. 73 (1990) 1817
3. Nahm C.-W. Mater. Lett. 47 (2001) 182
4. Nahm C.-W. J. Mater. Sci. Lett. 21 (2002) 201
5. Tsai J.-K., and Wu T.-B. J. Appl. Phys. 75 (1994) 1636
6. Tsai J.-K., and Wu T.-B. Mater. Lett. 26 (1996) 199
7. Kuo C.T., Chen C.S., and Lin I.-N. J. Amer. Ceram. Soc. 81 (1998) 2942
8. Hng H.-H., and Knowles K.M. J. Eur. Ceram. Soc. 19 (1999) 721
9. Hng H.-H., and Halim L. Mater. Lett. 57 (2003) 1411
10. Pike G.S., Kurtz S.R., Gourley P.L., Philipp H.R., and Levinson L.M. J. Appl. Phys. 57 (1985) 5512
11. F. Greuter, G. Latter, M. Rossineli, F. Stucki, Advances in Varistor Technology, Amer. Ceram. Soc., Westerville, OH, 3, 1989, p. 31
12. Wurst J.C., and Nelson J.A. J. Amer. Ceram. Soc. 55 (1972) 109
13. Mukae M., Tsuda K., and Nagasawa I. J. Appl. Phys. 50 (1979) 4475
14. Hozer L. Semiconductor Ceramics: Grain Boundary Effects (1994), Ellis Horwood p. 22