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Applied Physics Letters

Volumn 91, Issue 5, 2007, Pages

Switching of tunnel magnetoresistance by domain wall motion in (Ga,Mn)As-based magnetic tunnel junctions

(4) Fukuda, M a Yamanouchi, M b Matsukura, F a Ohno, H b

a TOHOKU UNIVERSITY (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; ELECTRIC CURRENTS; ELECTRODES; MAGNETIC FIELD EFFECTS; MAGNETIC MATERIALS; MAGNETORESISTANCE;

MAGNETIC TUNNELS; TIME-RESOLVED DETECTION; TUNNEL MAGNETORESISTANCE;

TUNNEL JUNCTIONS;

EID: 34547683383 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2767230 Document Type: Article

Times cited : (5)

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