Timing in thick silicon detectors-An update

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 579, Issue 1, 2007, Pages 83-86

  Studen, A ^a,b   Clinthorne, N ^a   Mikuz M ^b,c   Kramberger, G ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b JO EF STEFAN INSTITUTE   (Slovenia)

^c UNIVERSITY OF LJUBLJANA   (Slovenia)

Author keywords

Principles of detector operation; Silicon pad detectors; Timing properties

Indexed keywords

BIAS CURRENTS; DETECTORS; ELECTRIC FIELD EFFECTS; ELECTRONS;

PRINCIPLES OF DETECTOR OPERATION; SILICON PAD DETECTORS; TIMING PROPERTIES;

SILICON;

EID: 34547682222     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2007.04.060     Document Type: Article

References (5)

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3. N. Clinthorne, et al., IEEE NSS Conference Records, vol. 5, 2005, pp. 2868-2872.
4. Mikuž M., Studen A., Cindro V., and Kramberger G. IEEE, Trans. Nucl. Sci. NS-49 (2002) 2549
5. Agostinelli S., et al. Nucl. Instr. and Meth. A 506 (2003) 250-303