Depth profiling of boron in ultra-shallow junction devices using time-of-flight neutron depth profiling (TOF-NDP)

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 579, Issue 1, 2007, Pages 148-152

  Çetiner, Sacit M ^a   Ünlü, Kenan ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

Boron profiling; Coincidence neutron depth profiling; Conventional neutron depth profiling, Conventional NDP; Neutron depth profiling, NDP; Time of flight neutron depth profiling, TOF NDP; Time of flight, TOF; Ultra shallow junction device

Indexed keywords

ELECTRONIC EQUIPMENT; MEASUREMENT THEORY; NEUTRON SCATTERING; SEMICONDUCTOR DETECTORS;

BORON PROFILING; COINCIDENCE NEUTRON DEPTH PROFILING; NEUTRON DEPTH PROFILING (NDP); TIME-OF-FLIGHT (TOF); ULTRA-SHALLOW JUNCTION DEVICE;

SEMICONDUCTOR JUNCTIONS;

EID: 34547671045     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2007.04.027     Document Type: Article

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