Simulation of the defect pair VPb-VO in PbMoO4 crystals

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 260, Issue 2, 2007, Pages 619-622

  Chen, Jianyu ^a   Zhang, Qiren ^a   Liu, Tingyu ^a   Shao, Zexu ^a   Pu, Chunying ^a  

^a UNIVERSITY OF SHANGHAI FOR SCIENCE AND TECHNOLOGY   (China)

Author keywords

Defect pair VPb2 s( ) VO2 +; PbMoO4 crystal; Potential parameters; Simulation

Indexed keywords

COMPUTER SIMULATION; CRYSTAL DEFECTS; CRYSTALLINE MATERIALS;

FORMATION ENERGIES; POTENTIAL PARAMETERS;

LEAD COMPOUNDS;

EID: 34547601716     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2007.04.217     Document Type: Article

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