Plastic deformation of silicon between 20 °C and 425 °C

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 8, 2007, Pages 3110-3114

  Rabier, J ^a   Renault, P O ^a   Eyidi, D ^a   Demenet, J L ^a   Chen, J ^b   Couvy, H ^b   Wang, L ^b  

^a UNIVERSITÉ DE POITIERS   (France)

^b STONY BROOK UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EXTENDED DEFECTS; INTERNATIONAL CONFERENCES; PERFECT DISLOCATIONS; ROOM TEMPERATURES; SILICON SINGLE CRYSTALS; STRESS- STRAIN CURVES; SYNCHROTRON BEAMS; X-RAY DIFFRACTION;

CRYSTALS; DEFORMATION; DISLOCATIONS (CRYSTALS); ELECTRIC CONDUCTIVITY; EXPLOSIVE ACTUATED DEVICES; FLUID MECHANICS; HYDROSTATIC PRESSURE; NONMETALS; PLASTIC DEFORMATION; PLASTICS; SEMICONDUCTOR MATERIALS; SILICON; SILICON WAFERS; SINGLE CRYSTALS; STRESSES;

STRAIN RATE;

EID: 34547532738     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200675480     Document Type: Conference Paper

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