Surface layer in relaxor ferroelectric PZN- 4.5%PT single crystals

Journal of Applied Physics

Volumn 101, Issue 12, 2007, Pages

  Chang, W S ^a   Shanthi, M ^a   Rajan, K K ^a   Lim, L C ^a   Wang, F T ^b   Tseng, C T ^b   Tu, C S ^b   Yang, Ping ^a   Moser, H O ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b FU JEN CATHOLIC UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL SYMMETRY; FERROELECTRIC MATERIALS; OPTICAL MICROSCOPY; RELAXATION PROCESSES; SYNCHROTRON RADIATION;

FRACTURED SURFACES; HIGH-RESOLUTION SYNCHROTRON X-RAY MESH; RHOMBOHEDRAL PHASE;

SINGLE CRYSTALS;

EID: 34547401533     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2749199     Document Type: Article

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