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Volumn , Issue , 2007, Pages 358-363

Characterization and estimation of circuit reliability degradation under NBTI using on-line IDDQ measurement

Author keywords

IDDQ; NBTI; Reliability characterization

Indexed keywords

CIRCUIT SIMULATION; NANOTECHNOLOGY; RELIABILITY; SPURIOUS SIGNAL NOISE; STATIC RANDOM ACCESS STORAGE; THERMODYNAMIC STABILITY; TIMING CIRCUITS;

EID: 34547377273     PISSN: 0738100X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DAC.2007.375187     Document Type: Conference Paper
Times cited : (33)

References (33)
  • 1
    • 0041340533 scopus 로고    scopus 로고
    • Negative Bias Temperature Instability: Road to Cross in Deep Submicron Silicon Semiconductor Manufacturing
    • D. K. Schroder et al., "Negative Bias Temperature Instability: Road to Cross in Deep Submicron Silicon Semiconductor Manufacturing," J. Appl. Phys. 2003.
    • (2003) J. Appl. Phys
    • Schroder, D.K.1
  • 2
    • 0017493207 scopus 로고
    • Negative bias of MOS devices at high electric fields and degradation of MNOS devices
    • K.O. Jeppson et al., "Negative bias of MOS devices at high electric fields and degradation of MNOS devices," J. Appl. Phys. 1977.
    • (1977) J. Appl. Phys
    • Jeppson, K.O.1
  • 3
    • 33748535403 scopus 로고    scopus 로고
    • High-performance CMOS variability in the 65-nm regime and beyond
    • K. Bernstein et al., "High-performance CMOS variability in the 65-nm regime and beyond," IBM Journal, 2006.
    • (2006) IBM Journal
    • Bernstein, K.1
  • 4
    • 0842266651 scopus 로고    scopus 로고
    • A Critical Examination of the Mechanics of Dynamic NBTI for PMOSFETs
    • M. A. Alam, "A Critical Examination of the Mechanics of Dynamic NBTI for PMOSFETs," IEDM 2003.
    • (2003) IEDM
    • Alam, M.A.1
  • 6
    • 33646147793 scopus 로고    scopus 로고
    • Negative bias temperature instability mechanism: The role of molecular hydrogen
    • A. T. Krishnan, "Negative bias temperature instability mechanism: The role of molecular hydrogen," Appl. Phys. L., 2006.
    • (2006) Appl. Phys , vol.50
    • Krishnan, A.T.1
  • 7
    • 76349111305 scopus 로고    scopus 로고
    • A Comprehensive Framework for Predictive Modeling of Negative Bias Temperature Instability
    • S. Chakravarthi et al., "A Comprehensive Framework for Predictive Modeling of Negative Bias Temperature Instability," IRPS 2004.
    • (2004) IRPS
    • Chakravarthi, S.1
  • 8
    • 33646048788 scopus 로고    scopus 로고
    • Theory of Interface-Trap-Induced NBTI Degradation for Reduced Cross Section MOSFETs
    • H. Kufiuoglu et al., "Theory of Interface-Trap-Induced NBTI Degradation for Reduced Cross Section MOSFETs," IEEE Trans. on Electron Device 2006.
    • (2006) IEEE Trans. on Electron Device
    • Kufiuoglu, H.1
  • 9
    • 23844466920 scopus 로고    scopus 로고
    • Impact of NBTI on the Temporal Performance Degration of Digital Circuits
    • B. C. Paul et al., "Impact of NBTI on the Temporal Performance Degration of Digital Circuits," Electron Device L. 2005.
    • (2005) Electron Device L
    • Paul, B.C.1
  • 12
    • 34547263463 scopus 로고    scopus 로고
    • Impact of Negative Bias Temperature Instability in Nano-Scale SRAM Array: Modeling and Analysis
    • to be published
    • K. Kang et al., "Impact of Negative Bias Temperature Instability in Nano-Scale SRAM Array: Modeling and Analysis," IEEE Trans. CAD, to be published.
    • IEEE Trans. CAD
    • Kang, K.1
  • 13
    • 0842288185 scopus 로고    scopus 로고
    • Effect of pMOST Bias-Temperature Instability on Circuit Reliability Performance
    • Y. H. Lee et al., "Effect of pMOST Bias-Temperature Instability on Circuit Reliability Performance," IEDM, 2003.
    • (2003) IEDM
    • Lee, Y.H.1
  • 14
    • 33645403754 scopus 로고    scopus 로고
    • NBTI impact on transistor and circuit: Model, mechanisms and scaling effects
    • A. T. Krishnan et al., "NBTI impact on transistor and circuit: model, mechanisms and scaling effects," IEDM, 2003.
    • (2003) IEDM
    • Krishnan, A.T.1
  • 15
    • 33847757101 scopus 로고    scopus 로고
    • Material dependence of hydrogen diffusion: Implications for NBTI degrdataions
    • A. T. Krishnan et al., "Material dependence of hydrogen diffusion: implications for NBTI degrdataions," IEDM, 2005.
    • (2005) IEDM
    • Krishnan, A.T.1
  • 16
    • 34547333487 scopus 로고    scopus 로고
    • V. Reddy et al., Impact of Negative Bias Temperature Instability on Digital Circuit Reliability, ITC 2004.
    • V. Reddy et al., "Impact of Negative Bias Temperature Instability on Digital Circuit Reliability," ITC 2004.
  • 17
    • 84886738276 scopus 로고    scopus 로고
    • Impact of NBTI on SRAM Read Stability and Design for Reliability
    • S. V. Kumar et al., "Impact of NBTI on SRAM Read Stability and Design for Reliability," ISQED, 2006.
    • (2006) ISQED
    • Kumar, S.V.1
  • 18
    • 84932128326 scopus 로고    scopus 로고
    • A methodology for accurate assessment of soft-broken gate oxide leakage and the reliability of VLSI circuits
    • P. W. Mason et al., "A methodology for accurate assessment of soft-broken gate oxide leakage and the reliability of VLSI circuits," IRPS, 2004.
    • (2004) IRPS
    • Mason, P.W.1
  • 20
    • 1542605495 scopus 로고    scopus 로고
    • Full-chip subthreshold leakage power prediction and reduction techniques for sub-0.18-μm CMOS
    • S. Narendra et al., "Full-chip subthreshold leakage power prediction and reduction techniques for sub-0.18-μm CMOS," IEEE J. Solid State Circuits, 2004.
    • (2004) IEEE J. Solid State Circuits
    • Narendra, S.1
  • 21
    • 34547351466 scopus 로고    scopus 로고
    • Semiconductor Devices
    • S. M. Sze, Semiconductor Devices. WSE Wiley, 2002.
    • (2002) WSE Wiley
    • Sze, S.M.1
  • 22
    • 0042281583 scopus 로고    scopus 로고
    • Dynamic recovery of negative bias temperature instability in p-type metal-oxide-semiconductr field-effect transistors
    • M. Ershov et al., "Dynamic recovery of negative bias temperature instability in p-type metal-oxide-semiconductr field-effect transistors," Appl. Phys. L., 2003.
    • (2003) Appl. Phys , vol.50
    • Ershov, M.1
  • 23
    • 34247887177 scopus 로고    scopus 로고
    • On the dispersive versus arrhenius temperature activation of NBTI time evolution in plasma nitrided gate oxides: Measurements, theory, and implications
    • D. Varghese et al., "On the dispersive versus arrhenius temperature activation of NBTI time evolution in plasma nitrided gate oxides: measurements, theory, and implications," IEDM, 2005.
    • (2005) IEDM
    • Varghese, D.1
  • 24
    • 85165865002 scopus 로고    scopus 로고
    • R. Vattikonda et al., Modeling and minimization of PMOS NBTI effect for robust nanometer design, DAC, 2006.
    • R. Vattikonda et al., "Modeling and minimization of PMOS NBTI effect for robust nanometer design," DAC, 2006.
  • 25
    • 46149102717 scopus 로고    scopus 로고
    • An analytical model for negative bias temperature instability
    • S. V. Kumar et al., "An analytical model for negative bias temperature instability," ICCAD, 2006.
    • (2006) ICCAD
    • Kumar, S.V.1
  • 27
    • 46049087186 scopus 로고    scopus 로고
    • Gate Leakage vs. NBTI for Plasma Nitrided Oxides: Characterization, Physical Principles and Optimization
    • A. B. Islam et al., "Gate Leakage vs. NBTI for Plasma Nitrided Oxides: Characterization, Physical Principles and Optimization," IEDM, 2006.
    • (2006) IEDM
    • Islam, A.B.1
  • 28
    • 0032680122 scopus 로고    scopus 로고
    • Models and algorithms for bounds on leakage in CMOS circuits
    • M. C. Johnson et al., "Models and algorithms for bounds on leakage in CMOS circuits," IEEE Trans. CAD, 1999.
    • (1999) IEEE Trans. CAD
    • Johnson, M.C.1
  • 29
    • 0023437909 scopus 로고
    • Static-noise margin analysis of MOS SRAM cells
    • B. Seevinck et al., "Static-noise margin analysis of MOS SRAM cells," IEEE J. Solid State Circuits 1987.
    • (1987) IEEE J. Solid State Circuits
    • Seevinck, B.1
  • 30
    • 16244384194 scopus 로고    scopus 로고
    • Statistical Design and Optimization of SRAM Cell for Yield Enhancement
    • S. Mukhopadhyay et al., "Statistical Design and Optimization of SRAM Cell for Yield Enhancement," ICCAD 2004.
    • (2004) ICCAD
    • Mukhopadhyay, S.1
  • 31
    • 33847100084 scopus 로고    scopus 로고
    • Fast and Accurate Estimation of Nano-Scaled SRAM Read Failure Probability using Critical Point Sampling
    • I. J. Chang et al., "Fast and Accurate Estimation of Nano-Scaled SRAM Read Failure Probability using Critical Point Sampling," CICC 2005.
    • (2005) CICC
    • Chang, I.J.1
  • 32
    • 0035308547 scopus 로고    scopus 로고
    • The Impact of Intrinsic Device Fluctuations on CMOS SRAM Cell Stability
    • A. J. Bhavnagarwala et al., "The Impact of Intrinsic Device Fluctuations on CMOS SRAM Cell Stability," IEEE J. Solid State Circuits 2001.
    • (2001) IEEE J. Solid State Circuits
    • Bhavnagarwala, A.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.