Crystallinity evaluation in low-temperature-poly-silicon TFT manufacturing process - Application of lifetime measurement -

R and D: Research and Development Kobe Steel Engineering Reports

Volumn 57, Issue 1, 2007, Pages 8-16

  Sumie, Shingo ^a   Yamashita, Keizo ^a   Ojima, Futoshi ^a   Takamatsu, Hiroyuki ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SOFTWARE; DEFECTS; DOPING (ADDITIVES); LASER APPLICATIONS; LOW TEMPERATURE EFFECTS; POLYSILICON;

CRYSTALLINITY; HYDROGEN TREATMENT; LASER ANNEALING; MICROWAVE INTENSITY; OPTIMUM ENERGY;

THIN FILMS;

EID: 34547344399     PISSN: 03738868     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)

1. Japanese source
2. Japanese source
3. Japanese source
4. SEMI Standard : SEMI MF1535-1104 (Document Number 4906).
5. E. D. Palik : Handbook of Optical Constants of Solids, Academic Press, New York( 1985), p.547.
6. M. Born et al. : Principle of Optics, Pregamon Press (1975), § XIII.
7. S. Sumie et al. : J. Electrochem. Soc., Vol.152 (2005), G99.
8. C. W. Kim et al. : "Process Scheme of TS-SLS (2-Shot Sequential Lateral Solidification)", SID'04 DIGEST(2004), p.868.
9. K Tamagawa et al. : "Solid State YAG2 ω Laser Annealing System dor the Fabrication of Poly-Si TFT-FPDs", IDW04 (2004), FMC6-1.
10. K. Morikawa et al. : "Comparison of Poly-Si TFT Characteristics Crystallized by a YAG2ω laser and an Excimer laser", SID'04 (2004),p.l088.