Uniaxial strain relaxation on ultra-thin strained-Si directly on insulator (SSDOI) substrates

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Volumn , Issue , 2007, Pages 136-139

  Yin, Haizhou ^a   Ren, Z ^a   Saenger, K L ^b   Hovel, H J ^b   De Souza, J P ^b   Ott, J A ^b   Zhang, R ^a   Bedell, S W ^b   Pfeiffer, G ^a   Bendernagel, R ^a   Chan, V ^a   Sadana, D K ^b   Sung, C Y ^b   Khare, M ^b   Ieong, M ^a   Shahidi, G ^b  

^a IBM   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; EPITAXIAL LAYERS; ION IMPLANTATION; SILICON ON INSULATOR TECHNOLOGY; ULTRATHIN FILMS;

DRIVE CURRENT; RAISED SOURCE/DRAIN (RSD); SOLID PHASE EPITAXY (II/SPE);

STRAIN RELAXATION;

EID: 34547338270     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2006.306119     Document Type: Conference Paper

References (2)

1. K. Rim et al., IEDM Tech. Dig. p. 51 (2003);
2. D. Singh et al., IEDM Tech. Dig. p. 511 (2005)