Ultimate top-down etching processes for future nanoscale devices

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Volumn , Issue , 2006, Pages 462-465

  Samukawa, Seiji ^a   Endo, Kazuhiko ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; ELECTRON MOBILITY; REACTIVE ION ETCHING;

BEAM ETCHED SURFACES; NEUTRAL BEAM (NB) ETCHING;

NANOTECHNOLOGY;

EID: 34547320968     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2006.306301     Document Type: Conference Paper

References (6)

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4. S. Samukawa et al., J. Vac. Sci. Technol. A 20 (2002) 1566.
5. S. Noda et al., J. Vac. Sci. Technol. A 22 (2004) 1506.
6. H. Me et al., IEDM Tech. Digest 2004, p. 225.