A 0.65V 2.5GHz fractional-N frequency synthesizer in 90nm CMOS

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn , Issue , 2007, Pages 304-306

  Yu, Shih An ^a   Kinget, Peter ^a  

^a Columbia University ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC POTENTIAL; ENERGY DISSIPATION; FREQUENCY DIVIDING CIRCUITS; PHASE NOISE;

FRACTIONAL-N SYNTHESIZER; VOLTAGE BOOSTING;

FREQUENCY SYNTHESIZERS;

EID: 34547286248     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSCC.2007.373415     Document Type: Conference Paper

References (3)

1. "The International Technology Roadmap for Semiconductors", http://public.itrs.net, 2005.
2. S. Narendra et al., "Ultra-Low Voltage Circuits and Processor in 180nm to 90nm Technologies with a Swapped-Body Biasing Technique," ISSCC Dig. Tech. Papers, pp. 156-157 2004.
3. D. Leenaerts et al., "A 15-mW Fully Integrated I/Q Synthesizer for Bluetooth in 0.18-um CMOS," IEEE J. Solid-State Circuits, pp. 1155-1162, July, 2003.