Study of ferroelectric and reproducible bistable switching properties in CdMnS thin films for nonvolatile memory applications

Applied Physics Letters

Volumn 90, Issue 26, 2007, Pages

  Lee, J C ^a   Subramaniam, N G ^a   Lee, J W ^a   Kang, T W ^a  

^a Dongguk University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM COMPOUNDS; CURRENT VOLTAGE CHARACTERISTICS; FERROELECTRICITY; NONVOLATILE STORAGE; REMANENCE; SEMICONDUCTOR GROWTH;

BISTABLE SWITCHING PROPERTIES; NONDESTRUCTIVE READOUT MEASUREMENTS; POLARIZATION ENDURANCE;

THIN FILMS;

EID: 34547273494     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2753105     Document Type: Article

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