Influences of device size on small- And large-signal performance of SiGe power HBTs

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Volumn , Issue , 2006, Pages 188-190

  Wang, Guogong ^a   Park, Jonghoo ^a   Li, Hui ^a   Ma, Zhenqiang ^a   Lie, Donald ^b,c   Lopez, Jerry ^b   Hurtado, A M ^b  

^a University of Wisconsin Madison   (United States)

^b Dynamic Research Corporation DRC   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NATURAL FREQUENCIES; OSCILLATORS (ELECTRONIC); SIGNAL PROCESSING; SILICON COMPOUNDS;

DEVICE AREA; OSCILLATION FREQUENCY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 34547269574     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2006.306134     Document Type: Conference Paper

References (5)

1. J.-S. Rieh, D. Greenberg, A. Stricker and G Freeman, Proceedings of the IEEE, 92, p. 1522 (2005).
2. G. Wang, H.-C. Yuan and Z. Ma, IEEE Electron Device Letters, 27, p. 371 (2006).
3. G. Wang, H.-C. Yuan and Z. Ma, to appear in Semiconductor Science and Technology.
4. http://www-306.ibm.com/chips/techlib/techlib.nsf/products/BiCMOS_7HP
5. Z. Ma and N. Jiang, IEEE Transaction on Electron Devices, 52, p.248 (2005).