Thermoelectricity of Al-doped ZnO at different carrier concentrations

Journal of Materials Research

Volumn 22, Issue 7, 2007, Pages 1942-1946

  Kinemuchi, Yoshiaki ^a   Ito, Chihiro ^a   Kaga, Hisashi ^a   Aoki, Tomohiro ^b   Watari, Koji ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b Shintokogyo Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BOLTZMANN CONSTANT; IMPURITY DOPING; JONKER PLOT;

ALUMINUM; BOLTZMANN EQUATION; CARRIER CONCENTRATION; ELECTRIC CHARGE; ELECTRIC CONDUCTIVITY; IMPURITIES; OPTIMIZATION; SEEBECK COEFFICIENT; THERMOELECTRICITY;

ZINC OXIDE;

EID: 34547109393     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2007.0244     Document Type: Article

References (6)

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3. V. Srikant, V. Sergo, and D.R. Clarke: Epitaxial aluminum-doped zinc oxide thin films on sapphire: II. Defect equilibria and electric properties. J. Am. Ceram. Soc. 78, 1935 (1995).
4. S.E. Harrison: Conductivity and Hall effect of ZnO at low temperature. Phys. Rev. 93, 52 (1954).
5. A.R. Hutson: Hall effect studies of doped zinc oxide single crystals. Phys. Rev. 108, 222 (1957).
6. G.H. Jonker: The application of combined conductivity and Seebeck-effect plots for the analysis of semiconductor properties. Philips Res. Rep. 23, 131 (1968).