Tuning electronic ground states by using chemical pressure on quasi-two dimensional β″-(BEDT-TTF) 4[(H 3 O)M(C 2O 4) 3]·Y

Journal of Low Temperature Physics

Volumn 142, Issue 3-4, 2006, Pages 257-260

  Coldea, A I ^a   Bangura, A F ^a   Singleton, J ^b   Ardavan, A ^a   Akutsu Sato, A ^c   Akutsu, H ^d   Day, P ^e  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF TOKYO   (Japan)

^d UNIVERSITY OF HYOGO   (Japan)

^e DAVY FARADAY RESEARCH LABORATORY   (United Kingdom)

Author keywords

71.18.+y; 71.20.Rv; 72.15.Gd; 74.10.+v

Indexed keywords

CHEMICAL PRESSURE; HIGH-FIELD MAGNETOTRANSPORT; LOW TEMPERATURE ELECTRONIC BEHAVIOUR; TUNING ELECTRONIC GROUND STATE;

ELECTRONS; FERMI SURFACE; GALVANOMAGNETIC EFFECTS; GROUND STATE; LOW TEMPERATURE PROPERTIES; SUPERCONDUCTIVITY;

SUPERCONDUCTING MATERIALS;

EID: 34447630971     PISSN: 00222291     EISSN: 15737357     Source Type: Journal    
DOI: 10.1007/s10909-006-9196-6     Document Type: Conference Paper

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