Synthesis of silicon carbide coating on diamond by microwave heating of diamond and silicon powder: A heteroepitaxial growth

Scripta Materialia

Volumn 57, Issue 7, 2007, Pages 595-597

  Leparoux, S ^a   Diot, C ^b   Dubach, A ^a   Vaucher, S ^a  

^a SWISS FEDERAL LABORATORIES FOR MATERIALS SCIENCE AND TECHNOLOGY   (Switzerland)

^b allée de Mozart 10   (France)

Author keywords

Crystallization; Diamond; Heteroepitaxy; Microwave; Silicon carbide

Indexed keywords

HIGH-RESOLUTION SCANNING ELECTRON MICROSCOPY; PRISMATIC CRYSTALS; SILICON POWDER;

CRYSTAL STRUCTURE; DIAMONDS; EPITAXIAL GROWTH; MICROWAVE HEATING; POWDER METALLURGY; SCANNING ELECTRON MICROSCOPY; SYNTHESIS (CHEMICAL); X RAY SPECTROSCOPY;

SILICON CARBIDE;

EID: 34447625895     PISSN: 13596462     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.scriptamat.2007.06.016     Document Type: Article

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