Growth and characterization of In doped Cd0.8Mn0.2Te single crystal

Journal of Crystal Growth

Volumn 306, Issue 1, 2007, Pages 33-38

  Zhang, Jijun ^a   Jie, Wanqi ^a   Wang, Tao ^a   Zeng, Dongmei ^a   Yang, Bo ^a  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

Author keywords

A1. Doping; A1. Segregation; A1. X ray diffraction; A2. Bridgman technique; B2. Semiconducting II VI materials

Indexed keywords

BRIDGMAN TECHNIQUE; ETCH PITS DENSITY MEASUREMENT (EPD); SEMICONDUCTING II-VI MATERIALS;

CRYSTAL GROWTH; DOPING (ADDITIVES); INDIUM; INDUCTIVELY COUPLED PLASMA MASS SPECTROMETRY; SEMICONDUCTING CADMIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

SINGLE CRYSTALS;

EID: 34447527332     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.03.044     Document Type: Article

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