Magnetic random access memory (MRAM)

Journal of Nanoscience and Nanotechnology

Volumn 7, Issue 1, 2007, Pages 117-137

  Zheng, Yuankai ^a   Wu, Yihong ^b   Li, Kebin ^a   Qiu, Jinjun ^a   Han, Guchang ^a   Guo, Zaibing ^a   Luo, Ping ^a   An, Lihua ^a   Liu, Zhiyong ^a   Wang, Li ^a   Tan, Seng Ghee ^a   Zong, Baoyu ^a   Liu, Bo ^a  

^a DATA STORAGE INSTITUTE   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Cross Point MRAM; Giant Magneto Resistive; Magnetic Random Access Memory; Magnetic Tunnel Junction; Spin Transfer Switching; Synthetic Antiferromagnet; Thermal Factor; Thermally Assisted MRAM; Toggle MRAM

Indexed keywords

ANTIFERROMAGNETIC MATERIALS; MAGNETIC RECORDING; MAGNETIC STORAGE; MAGNETISM; MRAM DEVICES; TUNNEL JUNCTIONS;

CROSS POINT; GIANT MAGNETO-RESISTIVE; MAGNETIC RANDOM ACCESS MEMORY; MAGNETIC TUNNEL JUNCTION; SPIN TRANSFER SWITCHING; SYNTHETIC ANTIFERROMAGNETS; THERMAL FACTORS; THERMALLY ASSISTED MRAM; TOGGLE-MRAM;

RANDOM ACCESS STORAGE;

CHEMICAL MODEL; COMPUTER; DATA STORAGE DEVICE; EQUIPMENT DESIGN; HEAT; INFORMATION RETRIEVAL; MAGNETISM; NANOTECHNOLOGY; REPRODUCIBILITY; REVIEW; STATISTICAL MODEL; TEMPERATURE;

COMPUTER STORAGE DEVICES; COMPUTERS; EQUIPMENT DESIGN; HEAT; INFORMATION STORAGE AND RETRIEVAL; MAGNETICS; MODELS, CHEMICAL; MODELS, STATISTICAL; NANOTECHNOLOGY; REPRODUCIBILITY OF RESULTS; TEMPERATURE;

EID: 34447295682     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Review

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