Annealing influences on phosphorus-ion-implanted vicinal Si(111) studied by reflective second-harmonic generation

Physical Review B - Condensed Matter and Materials Physics

Volumn 76, Issue 3, 2007, Pages

  Lo, Kuang Yao ^a   Huang, Yi Jen ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34447093839     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.76.035302     Document Type: Article

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