Influence of active nitrogen species on the nitridation rate of sapphire

MRS Internet Journal of Nitride Semiconductor Research

Volumn 4, Issue SUPPL. 1, 1999, Pages

  Ptak, A J ^a   Ziemer, K S ^b   Millecchia, M R ^a   Stinespring, C D ^b   Myers, T H ^a  

^a WEST VIRGINIA UNIVERSITY   (United States)

^b West Virginia University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CUBIC BORON NITRIDE; ELECTROSTATICS; GALLIUM NITRIDE; IMPURITIES; MOLECULAR BEAM EPITAXY; NITRIDING; NITROGEN; NUCLEATION; PLASMA DEVICES; PYROLYSIS;

ACTIVE NITROGEN SPECIES; ELECTRON CYCLOTRON RADIATIONS (ECR); ELECTROSTATIC DEFLECTORS; NITRIDATION;

SAPPHIRE;

EID: 3442898869     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300002398     Document Type: Conference Paper

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