Electrical characterization of movpe-grown P-type GaN:Mg against annealing temperature

MRS Internet Journal of Nitride Semiconductor Research

Volumn 4, Issue SUPPL. 1, 1999, Pages

  Fujita, Shizuo ^a   Funato, Mitsuru ^a   Park, Doo Cheol ^a   Ikenaga, Yoshifumi ^a   Fujita, Shigeo ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; ELECTRIC EXCITATION; EPITAXIAL GROWTH; HETEROJUNCTIONS; LASER PULSES; LASERS; LIGHT EMISSION; PHOTOELECTRON SPECTROSCOPY; PHOTOLUMINESCENCE; PUMPING (LASER); SEMICONDUCTOR INSULATOR BOUNDARIES;

OPTICAL EXCITATION; OPTICAL GAIN; STIMULATED EMISSIONS; TRANSITION ENERGY;

GALLIUM NITRIDE;

EID: 3442888074     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300003227     Document Type: Conference Paper

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