Cubic InGaN grown by MOCVD

MRS Internet Journal of Nitride Semiconductor Research

Volumn 4, Issue SUPPL. 1, 1999, Pages

  Li, J B ^a   Yang, Hui ^a   Zheng, L X ^a   Xu, D P ^a   Wang, Y T ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; FILM GROWTH; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; PHOTOLUMINESCENCE; SUBSTRATES; X RAY DIFFRACTION;

BAND GAP ENERGY; BUFFER LAYERS; WAVELENGTHS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 3442884011     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300002520     Document Type: Conference Paper

References (12)

1. S. Strite, H.Morkoc, J. Vac. Sci. Technol. B 10 1227 (1992).
2. Fujieda, Y. Matsumoto, Jpn. J. Appl. Phys. 30 L1665 (1991).
3. S. Yoshida, H. Okumura, S. Misawa, E. Sakuma, Surf. Sci. 267, 50(1992).
4. A. Kikuchi, H. Hoshi, K. Kishino, Jpn. J. Appl. Phys. 33, 688(1994).
5. S. Bharatan, K. S. Jones, C. R. Abernathy, S. J. Pearton, F. Ren, P. W. Wisk, J. R. Lothian, J. Vac. Sci. Technol A 12, 1094 (1994)
6. H. Okumura, S. Yoshida, T. Okahisa, Appl. Phys. Lett. 64, 2997(1994)
7. J. W. Yang, J. N. Kuznia, Q. C. Chen, M. Asif. Khan, T. George, M. De Graef, S. Mahajan, Appl. Phys. Lett. 67, 3759(1995)
8. H. Hong, K. Wang, D. Pa Vidis, J. Electron. Mater. 24, 213(1995)
9. T. Lei, T. D. Moustakas, R. J. Graham, Y. He, S. J. Berkowitz, J. Appl. Phys. 71, 4933(1992)
10. M. J. Paisley, Z. Sitar, J. B. Posthill, R. F. Davis, J. Vac. Sci. Technol. A 7, 701(1989)
11. R. C. Powell, N. E. Lee, Y. W. Kim, J. E. Greene, J. Appl. Phys. 73, 189(1989)
12. Hui Yang, L.X. Zheng, J.B. Li, X.J. Wang, D.P. Xu, Y.T. Wang, and X.W. Hu, submitted to Appl. Phys. Lett.