Effect of Re dopant on the electrical and optical properties of MoSe2 single crystals

Journal of Alloys and Compounds

Volumn 442, Issue 1-2 SPEC. ISS., 2007, Pages 249-251

  Hu, S Y ^a   Liang, C H ^b   Tiong, K K ^b   Huang, Y S ^c  

^a TUNG FANG INSTITUTE OF TECHNOLOGY   (Taiwan)

^b NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^c NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Aniosotropy; Electrical transport; Impurities in semiconductors; Optical properties; Transition metal alloys and compounds

Indexed keywords

ANISOTROPY; ELECTRIC PROPERTIES; OPTICAL PROPERTIES; SINGLE CRYSTALS; TRANSPORT PROPERTIES;

CHEMICAL VAPOR TRANSPORT (CVT); CRYSTAL ANISOTROPY; GROWTH PROCESS;

TRANSITION METAL ALLOYS;

EID: 34347247312     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2006.08.360     Document Type: Article

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