Time resolved photoconduction studies of uniformly doped and p-n junction Si nanowires

Materials Research Society Symposium Proceedings

Volumn 958, Issue , 2007, Pages 219-224

  Tsakalakos, Loucas ^a   Michael, Darryl ^a   Fronheiser, Jody ^a   Balch, Joleyn ^a   Wortman, Robert ^a,b   Wilson, Paul ^a   White, David ^a   Boone, Rolf ^a   LeBoeuf, Stephen ^a  

^a GE GLOBAL RESEARCH   (United States)

^b PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE VOLTAGE; NANOWIRE DEVICES; P-N JUNCTION; PHOTOCONDUCTION;

FIELD EFFECT TRANSISTORS; GROWTH RATE; NANOWIRES; PHOTOCONDUCTIVITY; PHOTOLITHOGRAPHY; SEMICONDUCTOR DOPING;

SEMICONDUCTOR JUNCTIONS;

EID: 34347239289     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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