Influence of magnetic clusters on electrical and magnetic properties of In1-xMnxSb/GaAs dilute magnetic semiconductor grown by liquid phase epitaxy

Solid State Communications

Volumn 143, Issue 4-5, 2007, Pages 272-275

  Ganesan, K ^a   Mariyappan, S ^a   Bhat, H L ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

A. Ferromagnetic semiconductors; A. InMnSb; D. Anomalous Hall effect; D. Magnetization

Indexed keywords

DOPING (ADDITIVES); FERROMAGNETIC MATERIALS; HALL EFFECT; LIQUID PHASE EPITAXY; MAGNETIC PROPERTIES; MAGNETIZATION; MAGNETORESISTANCE; SCANNING ELECTRON MICROSCOPY;

FERROMAGNETIC CLUSTERS; MAGNETIC CLUSTERS; REMNANT FIELD; TEMPERATURE DEPENDENT RESISTIVITY; VARIABLE-RANGE HOPPING CONDUCTION MECHANISM;

MAGNETIC SEMICONDUCTORS;

EID: 34250863231     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2007.04.046     Document Type: Article

References (20)

1. Zutic I., Fabian J., and Sarma S.D. Rev. Modern Phys. 76 (2004) 323
2. Raebiger H., Hynninen T., Ayuela A., and von Boehm J. Physica B 376-377 (2006) 643
3. Munekata H., Ohno H., von Molnar S., Segmuller A., Chang L.L., and Esaki L. Phys. Rev. Lett. 63 (1989) 1849
4. Wojtowicz T., Cywinski G., Lim W.L., Liu X., Dobrowolska M., Furdyna J.K., Yu K.M., Walukiewicz W., Kim G.B., Chen X., Wang S.M., and Luo H. Appl. Phys. Lett. 82 (2003) 4310
5. Matsukura F., Abe E., and Ohno H. J. Appl. Phys. 87 (2000) 6442
6. Blattner A.J., Lensch J., and Wessels B.W. J. Electon. Mater. 30 (2001) 1408
7. Yoon I.T., Leem J.H., and Kang T.W. J. Cryst. Growth 252 (2003) 152
8. Chen C., Chen N., Liu L., Li Y., and Wu J. J. Cryst. Growth 260 (2004) 50
9. Yanagi S., Kuga K., Slupinski T., and Munekata H. Physica E 20 (2004) 333
10. Akinaga H., Miyanishi S., Tanaka K., Van Roy W., and Onodera K. Appl. Phys. Lett. 76 (2000) 97
11. Wang K.Y., Sawicki M., Edmonds K.W., Campion R.P., Rushforth A.W., Freeman A.A., Foxon C.T., Gallagher B.L., and Dietl T. Appl. Phys. Lett. 88 (2006) 022510
12. Heimbrodt W., Klar P.J., Ye S., Lampalzer M., Michel C., Baranovskii S.D., Thomas P., and Stolz W. J. Supercond. 18 (2005) 315
13. Akinaga H., De Boeck J., Borghs G., Miyanishi S., Asamitsu A., Van Roy W., Tomioka Y., and Kuo L.H. Appl. Phys. Lett. 72 (1998) 3368
14. Park Y.D., Wilson A., Hanbicki A.T., Mattson J.E., Ambrose T., Spanos G., and Jonker B.T. Appl. Phys. Lett. 78 (2001) 2739
15. Venkataraghavan R., Udayashankar N.K., Rodrigues B.V., Rao K.S.R.K., and Bhat H.L. Bull. Mater. Sci. 22 (1999) 133
16. Schlovskii B.I., and Efros A.L. Electronics Properties of Doped Semiconductors (1984), Springer-Verlag, Berlin
17. Obukhov S.A. Phys. Status Solidi B 242 (2005) 1298
18. Matsukura F., Ohno H., Shen A., and Sugawara Y. Phy. Rev. B 57 (1998) R2037
19. van Esch A., Van Bockstal L., De Boeck J., Verbanck G., van Steenbergen A.S., Wellmann P.J., Grietens B., Bogaerts R., Herlach F., and Borghs G. Phy. Rev. B 56 (1997) 13103
20. Csontos M., Wojtowicz T., Liu X., Dobrowolska M., Janko B., Furdyna J.K., and Mihaly G. Phy. Rev. Lett. 95 (2005) 227203