Structural and optical properties of ZnO films grown on silicon and their applications in MOS devices in conjunction with ZrO2 as a gate dielectric

Bulletin of Materials Science

Volumn 30, Issue 3, 2007, Pages 247-254

  Nandi, S K ^b   Chakraborty, S ^a   Bera, M K ^a   Maiti, C K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Conduction mechanism; High k gate dielectric; PECVD; ZnO; ZrO2

Indexed keywords

FILM GROWTH; GATE DIELECTRICS; MOS DEVICES; OPTICAL PROPERTIES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

CONDUCTION MECHANISM; HIGH-K GATE DIELECTRIC;

THIN FILMS;

EID: 34250853017     PISSN: 02504707     EISSN: None     Source Type: Journal    
DOI: 10.1007/s12034-007-0044-3     Document Type: Article

References (27)

1. Ayouchi R, Leinen D, Martin F, Gabas M, Dalchiele E and Barrado J R R 2003 Thin Solid Films 426 68
2. Bachari E M, Amor S B, Baud G and Jacquet M 2001 Mater. Sci. Eng. B79 165
3. Bagnall D M, Chen Y F, Zhu Z, Yao T, Koyama S, Shen M Y and Goto T 1997 Appl. Phys. Lett. 70 2230
4. Balog M, Schieber M, Michman M and Patai S 1977 Thin Solid Films 47 109
5. Cameron M A and George S M 1999 Thin Solid Films 348 90
6. French R H, Glass S J, Ohuchi F S, Xu Y N and Ching W Y 1994 Phys. Rev. B49 5133
7. Gorla C R, Emanetoglu N W, Liang S, Mayo W E, Lu Y, Wraback M and Shen H 1999 J. Appl. Phys. 85 2595
8. Jeong W J, Kim S K and Park G C 2006 Thin Solid Films 506-507 180
9. Khawaja E E, Bouamrane F, Hallak A B, Daous M A and Salim M A 1993 J. Vac. Sci. & Technol. A11 580
10. Kralik B, Chang E K and Louie S G 1998 Phys. Rev. B57 7027
11. Kubo M, Oumi Y, Takaba H, Chatterjee A, Miyamoto A, Kawasaki M, Yoshimoto M and Koinuma H 2000 Phys. Rev. B61 16187
12. Liu Y, Gorla C R, Liang S, Emanetoglu N, Lu Y, Shen H and Wraback M 2000 J. Electron. Mater. 29 60
13. Marotti R E, Guerra D N, Bello C, Machado G and Dalchiele E A 2004 Sol. Energy Mater. & Sol. Cell 82 85
14. Nandi S K et al 2002 Electron. Lett. 38 1390
15. Raoux S, Cheung D, Fodor M, Taylor W N and Fairbairn K 1997 Plasma Sources Sci. Technol. 6405
16. Ray S K, Maiti C K, Lahiri S K and Chakrabarti N B 1996 Adv. Mater. Opt. Electron. 6 73
17. Russak M A, Jahnes C V and Katz E P 1989 J. Vac. Sci. & Technol. A7 1248
18. Shi C, Fu Z, Guo C, Ye X, Wei Y, Deng J, Shi J and Zhang G 1999 J. Electron. Spectrosc. & Rel. Phenom. 101-103 629
19. Sun Y M, Lozano J, Ho H, Park H J, Veldman S and White J M 2000 Appl. Surf. Sci. 61 115
20. Sze S M 1979 Physics of semiconductor devices (Wiley Eastern Limited)
21. Tanaka S, Takahashi K, Sekiguchi T, Sumino K and Tanaka J 1995 J. Appl. Phys. 77 4021
22. Tang Z K, Kawasaki M, Ohtomo A, Koinuma H and Segawa Y 2006 J. Cryst. Growth 287 169
23. Terman L M 1962 Solid State Electron. 5 285
24. Vanheusden K, Warren W L, Seager C H, Tallant D R, Voigt J A and Gnade B E 1996 J. Appl. Phys. 79 7983
25. Voinigescu S P, Iniewski K, Lisak R, Salama C A T, Noel J P and Houghton D C 1994 Solid State Electron. 37 1491
26. Xu W, Ye Z, Zhu L, Zeng Y, Jiang L and Zhao B 2005 J. Cryst. Growth 277 490
27. Yassine A, Nariman H E and Olasupo K 1999 IEEE Electron. Dev. Lett. 20 390