High brightness ingan LEDs degradation at high injection current bias

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 615-616

  Levada, S ^a   Meneghini, M ^a   Zanoni, E ^a   Buso, S ^a   Spiazzi, G ^a   Meneghesso, G ^a   Podda, S ^b   Mura, Giovanna ^b   Vanzi, M ^b  

^a UNIVERSITY OF PADOVA   (Italy)

^b UNIVERSITY OF CAGLIARI   (Italy)

Author keywords

GaN; High brightness; LED reliability

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC PROPERTIES; GALLIUM NITRIDE; HEAT SINKS; LUMINANCE; RELIABILITY; SEMICONDUCTING INDIUM COMPOUNDS;

DEVICES RELIABILITY; INJECTION CURRENT BIAS; RECOMBINATION CURRENT;

LIGHT EMITTING DIODES;

EID: 34250765301     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251289     Document Type: Conference Paper

References (3)

1. http://www.lumileds.com/pdfs/techpaperspres/ions2001.PDF
2. Wright et al. 2003 J. Appl. Phys, Vol. 94, No 8
3. Myers et al. 2000 J. Appl. Phys. Vol 88, No 8