Low noise magnetoresistive sensors for current measurement and compasses

Journal of Magnetism and Magnetic Materials

Volumn 316, Issue 2 SPEC. ISS., 2007, Pages

  Pannetier Lecoeur, M ^a   Fermon, C ^a   de Vismes, A ^a   Kerr, E ^b   Vieux Rochaz, L ^c  

^a CNRS   (France)

^b TRINITY COLLEGE DUBLIN   (Ireland)

^c CEA LETI   (France)

Author keywords

Compass; Current sensor; Giant magnetoresistance

Indexed keywords

COMPASSES (MAGNETIC); ELECTRIC CURRENT MEASUREMENT; GIANT MAGNETORESISTANCE; MAGNETIZATION REVERSAL; PERMANENT MAGNETS;

CURRENT SENSORS; EXTERNAL BIASING; HALL SENSORS; PERMANENT MAGNET BIASING;

SENSORS;

EID: 34250682249     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmmm.2007.02.105     Document Type: Article

References (7)

1. Lenssen K.M.H., et al. Sens. Actuators 85 (2000) 1
2. Tondra M. In: Ripka P. (Ed). Magnetic Sensors and Magnetometers. first ed (2001), Artech House Publishers, London 163-165 (Chapter 4.2.3)
3. General informationon GMR, Nonvolatile Electronics, http://www.nve.com.
4. Vopalensky M., Ripka P., Kubik J., et al. Sens.Actuators A: Phys. 110 1-3 (2004) 254
5. Pannetier M., Fermon C., Le Goff G., Simola J., Kerr E., and Coey J.M.D. JMMM 290-291 (2005) 1158
6. Raquet B. Electronic noise in magnetic materials and devices. In: Ziese M., and Thornton M.J. (Eds). Spin Electronics (2001), Springer, Berlin
7. The variation of resistance of the MR element is proportional to the cosine between the free layer of the spin valve and its hard layer direction. The formula corresponds to an applied field along the hard layer direction and a bias field perpendicular to it assuming that the bias field is strong enough to align the free layer.