A high gain doherty amplifier using embedded drivers

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2006, Pages 1838-1841

  Ghim, Jae Gon ^a   Cho, Kyoung Joon ^b   Kim, Jong Heon ^a   Stapleton, Shawn P ^b  

^a Kwangwoon University   (South Korea)

^b SIMON FRASER UNIVERSITY   (Canada)

Author keywords

Doherty amplifier; Gate bias; Peaking amplifier; Peaking compensation line

Indexed keywords

BANDWIDTH; EMBEDDED SYSTEMS; LEAKAGE CURRENTS;

DOHERTY AMPLIFIER; GATE BIAS; PEAKING AMPLIFIER; PEAKING COMPENSATION LINE;

MICROWAVE AMPLIFIERS;

EID: 34250312483     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2006.249753     Document Type: Conference Paper

References (8)

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2. K. J. Cho, W. J. Kim, J. H. Kim, S. P. Stapleton, "Linearity optimization of a high power Doherty amplifier based on post-distortion compensation," Microwave and Wireless Components Letters, IEEE. vol. 15, issue 11, pp. 748-750 Nov. 2005.
3. W. J. Kim, S. P. Stapleton, K. J. Cho, and J. H. Kim, "Digital predistortion of a Doherty amplifier with a weak memory with in a connected solution," IEEE Vehicular Technology Conf., Sep.2004
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7. Gajadharsing, J.R., Bosma, O., van Westen, P., "Analysis and design of a 200 W LDMOS based Doherty amplifier for 3 G base stations," Microwave Symposium Digest, 2004 IEEE MTT-S International Volume 2, 6-11 June 2004 Page(s):529-532 Vol.2.
8. S.C.Cripps, RF Power Amplifiers for Wireless Communications. Norwood, MA: Artech Housse, 1999