Semiconductor Materials and Modelling

Practical Handbook of Photovoltaics: Fundamentals and Applications

Volumn , Issue , 2003, Pages 95-121

  Markvart, Tom ^a   Castañer, Luis ^b  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^b UNIVERSITAT POLITÈCNICA DE CATALUNYA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANTIREFLECTION COATINGS; ENERGY GAP; OPTICAL PROPERTIES; RADIATION DAMAGE; RADIATION EFFECTS; REFRACTIVE INDEX; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS;

CARRIER STATISTICS; COMPREHENSIVE MODEL; KEY CHARACTERISTICS; PHOTOVOLTAIC APPLICATIONS; RECOMBINATION PROCESS; SEMICONDUCTOR PARAMETERS; SEMICONDUCTOR PROPERTIES; TEMPERATURE VARIATION;

SOLAR CELLS;

EID: 34250203035     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1016/B978-185617390-2/50006-4     Document Type: Chapter

References (67)

1. Schwartz R.J. The application of numerical techniques to the analysis and design of solar cells. Current Topics in Photovoltaics 1990, 25. T.J. Coutts, J.D. Meakin (Eds.).
2. Selberherr S. Analysis and Simulation of Semiconductor Devices 1984, Springer, Vienna, New York.
3. Properties of Gallium Arsenide 1996, IEE/INSPEC, Institution of Electrical Engineers, London. 3rd edition. M.R. Brozel, G.E. Stillman (Eds.).
4. Properties, Processing and Applications of Indium Phosphide 2000, INSPEC/IEE, London. T.P. Pearsall (Ed.).
5. Shur M. Physics of Semiconductor Devices 1990, Prentice Hall, Englewood Cliffs, NJ.
6. Chu T.L. Cadmium telluride solar cells. Current Topics in Photovoltaics 1988, Vol. 3:235. T.J. Coutts, J.D. Meakin (Eds.).
7. Kazmerski L.L., Wagner S. Cu-ternary chalcopyrite solar cells. Current Topics in Photovoltaics 1985, Vol. 1:41. C. T.J., M. J.D. (Eds.).
8. Handbook of Physics and Chemistry of Solids 2001, CRC Press, Boca Raton. 82nd edition.
9. 1-XAs: material parameters for use in research and device applications. J. Appl. Phys. 1985, Vol. 58:R1.
10. Varshni Y.P. Temperature dependence of the energy gap in semiconductors. Physica 1967, Vol. 34:149.
11. Thurmond Cd. The standard thermodynamic functions for the formation of electrons and holes in Ge, Si, GaAs and GaP. J. Electrochem. Soc. 1975, Vol. 122:1133.
12. Sproul A.B., Green M.A. Intrinsic carrier concentration and minority-carrier mobility of silicon from 77-K to 300-K. J. Appl. Phys. 1993, Vol. 73:1214-1225.
13. Marshak A.H., Van Vliet K.M. Electrical currents in solids with position dependent band structure. Solid-State Electron. 1978, Vol. 21:417.
14. Smith R.R. Semiconductors 1978, Cambridge University Press, Cambridge. 2nd edition.
15. Caughey D.M., Thomas R.E. Carrier mobilities in silicon empirically related to doping and field. Proc. IEEE 1967, Vol. 55:2192.
16. Klaassen D.B.M. A unified mobility model for device simulation -1. Model equations and concentration dependence. Solid-State Electron. 1992, Vol. 35:953-959.
17. Arora N.D., Hauser T.R., Roulston D.J. Electron and hole mobilities in silicon as a function of concentration and temperature. IEEE Trans. Electron Devices 1982, Vol. ED-29:292.
18. Swirhun S.E., Kwark Y.-H., Swanson R.M. Measurement of electron lifetime, electron mobility and band-dap narrowing in heavily doped p-type silicon. IEDM'86 1986, 24-2 7.
19. Del Alamo J., Swirhun S., Swanson R.M. Simultaneous measurement of hole lifetime, hole mobility and band-gap narrowing in heavily doped n-type silicon. IEDM'85 1985, 290-293.
20. Sze S.M. Physics of Semiconductor Devices 1981, John Wiley &Sons, New York. 2nd edition.
21. Lancefield D. Electron mobility in GaAs: overview. Properties of Gallium Arsenide 1996, 41. IEE/ INSPEC, Institution of Electrical Engineers, London. 3rd edition. M.R. Brozel, G.E. Stillman (Eds.).
22. Harmon E.S., Lovejoy M.L., Lundstrom M.S., Melloch M.R. Minority electron mobility in doped GaAs. Properties of Gallium Arsenide 1996, 81. IEE/INSPEC, Institution of Electrical Engineers, London. 3rd edition. B. M.R., S. G.E. (Eds.).
23. Lovejoy M.L., Melloch M.R., Lundstrom M.S. Minority hole mobility in GaAs. Properties of Gallium Arsenide 1996, 123. Institution of Electrical Engineers, London. 3rd edition. M.R. Brozel, G.E. Stillman (Eds.).
24. Barnes J.J., Lomax R.J., Haddad G.I. Finite element simulation of GaAs MESFET's with lateral doping profiles and submicron gates. IEEE Trans. Electron Devices 1976, Vol. ED-23:1042.
25. 6 ordering. J. Appl. Phys. 1977, Vol. 48:4587.
26. Ahrenkiel R.K. Minority carrier lifetime in InP. Properties, Processing and Applications of Indium Phosphide 2000, INSPEC/ IEE, London. T.P. Pearsall (Ed.).
27. Handbook of Optical Constants of Solids 1985, Academic Press Handbook Series, Orlando. E.D. Palik (Ed.).
28. Handbook of Optical Constants of Solids II 1991, Academic Press, San Diego. E.D. Palik (Ed.).
29. Rajkanan K., Singh R., Shewchun J. Absorption coefficient of silicon for solar cell calculations. Solid-State Electron. 1979, Vol. 22:793.
30. Schmid P.E. Optical absorption in heavily doped silicon. Phys. Rev. 1981, Vol. B23:5531.
31. Fan H.Y. Semiconductors and Semimetals 1967, 409. Academic Press. R.K. Willardson, A.C. Beer (Eds.).
32. Landsberg P.T. Recombination in Semiconductors 1991, Cambridge University Press.
33. Van Roosbroeck W., Shockley W. Photon-radiative recombination of electrons and holes in germanium. Phys. Rev. 1954, Vol. 94:1558.
34. Pilkuhn, M.H., Light emitting diodes, in Moss, T.S., Ed., Vol. 4, Handbook of Semiconductors, North Holland, p. 539.
35. Handbook Series on Semiconductor Parameters 1996, World Scientific, London. http://www.ioffe.rssi.ru/SVA/NSM/Semicond/, M. Levinstein, S. Rumyantsev, M. Shur (Eds.).
36. Handbook Series on Semiconductor Parameters 1996, World Scientific, London, 1999. http://www.ioffe.rssi.ru/SVA/NSM/Semicond/, M. Levinstein, S. Rumyantsev, M. Shur (Eds.).
37. Shockley W., Read W.T. Statistics of the recombination of holes and electrons. Phys. Rev. 1952, Vol. 87:835.
38. Hall R.N. Electron hole recombination in germanium. Phys. Rev. 1952, Vol. 87:387.
39. Cuevas A., Giroult-Matlakowski G., Basore P.A., Du Bois, Cking R. Extraction of the surface recombination velocity of passivated phosphorus doped emitters. Proc. 1st World Conference on Photovoltaic Energy Conversion 1994, 1446-1449.
40. King R.R., Sinton R.A., Swanson R.M. Studies of diffused emitters: saturation current, surface recombination velocity and quantum efficiency. IEEE Trans. Electron Devices 1990, Vol. ED-37:365.
41. Andreev V.M., Grilikhes V.A., Rumyantsev V.D. Photovoltaic Conversion of Concentrated Sunlight 1997, Wiley, Chichester.
42. Coutts T.J., Yamaguchi M. Indium phosphide based solar cells: a critical review of their fabrication, performance and operation. Current Topics in Photovoltaics 1988, Vol. 3:79. T.J. Coutts, J.D. Meakin (Eds.).
43. Klaassen D.B.M. A unified mobility model for device simulation - II. Temperature dependence of carrier mobility and lifetime. Solid-State Electron. 1992, Vol. 35:961.
44. Tada H.Y., Carter J.R., Anspaugh B.E., Downing R.G. SolarCell Radiation Handbook. JPL Publication 82-69 1982, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA.
45. Anspaugh B.E. GaAs Solar Cell Radiation Handbook. JPL Publication 96-9 1996, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA.
46. Kinchin G.H., Pease R.S. The displacement of atoms in solids by radiation. Rep. Prog. Phys. 1955, Vol. 18:1.
47. Seitz F., Koehler J.S. Displacement of atoms during irradiation. Solid State Physics 1956, Vol. 2:307.
48. Hovel H.J. Semiconductor solar cells. Semiconductors and Semimetals 1975, Vol. 11. Academic Press, New York. R.K. Willardson, A.C. Beer (Eds.).
49. Markvart T. Radiation damage in solar cells. J. Materials Science: Materials in Electronics 1990, Vol. l:1.
50. Yamaguchi M., Ando K. Mechanism for radiation resistance of InP solar cells. J. Appl. Phys. 1988, Vol. 63:5555.
51. Smits F.M. IEEE Trans. Nucl. Sci. 1963, Vol. NS-10:88.
52. Meulenberg A., Treble F.C. Damage in silicon solar cells from 2 to 155 MeV protons. Proc. 10th IEEE Photovoltaic Specialists Conf. 1973, 359.
53. Rosenzweig W. Diffusion length measurement by means of ionizing radiation. Bell. Syst. Tech. J. 1962, Vol. 41:1573-1588.
54. Wilsey N.D. Proc. 9th IEEE Photovoltaic Specialists Conf. 1972, 338. Silver Springs.
55. Minahan J.A., Green M.J. Proc. 18th IEEE Photovoltaic Specialists Conf. 1985, 350.
56. Downing R.G, Carter J.R., Denney J.M. The energy dependence of electron damage in silicon. Proc. 4th IEEE Photovoltaic Specialists Conf. 1964, Vol. l:A.
57. Rosenzweig W., Smits F.M., Brown W.L. Energy dependence of proton irradiation damage in silicon. J. Appl. Phys. 1964, Vol. 35:2707.
58. Keyes R.W. The energy gap of impure silicon. Comm. Solid State Phys. 1977, Vol. 7(6):149.
59. Wagner J., Delalamo J.A. Band-gap narrowing in heavily doped silicon: a comparison of optical and electrical data. J. Appl. Phys. 1988, Vol. 63:425.
60. 1-X strained layers. Solid-State Electron. 1991, Vol 34:453.
61. Jain S.C, Mcgregor J.M., Roulston D.J., Balk P. Modified simple expression for bandgap narrowing in n-type GaAs. Solid-State Electron. 1992, Vol. 35:639.
62. Klaassen D.B.M., Slotboom J.W, De Graaf H.C. Unified apparent bandgap narrowing in n and p-type silicon. Solid-State Electron. 1992, Vol. 35:125.
63. Lundstrom M.S., Harmon E.S., Melloch M.R. Effective bandgap narrowing in doped GaAs. Properties of Gallium Arsenide 1996, 186. IEE/INSPEC, Institution of Electrical Engineers, London. 3rd edition. M.R. Brozel, G.E. Stillman (Eds.).
64. Tsang C., Street R.A. Phys. Rev. 1979, Vol. B19:3027.
65. Amorphous Silicon and Related Materials 1989, University of Chicago. H. Fritzsche (Ed.).
66. Puigdollers, J. and Voz, C., personal communication.
67. Street R.A. Hydrogenated Amorphous Silicon 1991, Cambridge University Press.