Electronic and structural changes induced by irradiation or annealing in pulsed laser deposited As50Se50 films. An XPS and UPS study

Journal of Physics and Chemistry of Solids

Volumn 68, Issue 5-6, 2007, Pages 906-910

  Kalyva, M ^a,b   Siokou, A ^a   Yannopoulos, S N ^a   Nemec P ^c   Frumar, M ^c  

^a INSTITUTE OF CHEMICAL ENGINEERING SCIENCES   (Greece)

^b UNIVERSITY OF PATRAS   (Greece)

^c UNIVERSITY OF PARDUBICE   (Czech Republic)

Author keywords

A. Chalcogenide; C. Photoelectron spectroscopy; D. Electronic structure; D. Surface properties

Indexed keywords

ANNEALING; ARSENIC COMPOUNDS; ELECTRONIC STRUCTURE; ENERGY GAP; PHOTOELECTRON SPECTROSCOPY; PULSED LASER DEPOSITION; SURFACE PROPERTIES;

BULK GLASSES; CHEMICAL DISORDERS; ELECTRONIC DEFECTS; STRUCTURAL CHANGES;

CHALCOGENIDES;

EID: 34250198635     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2006.12.022     Document Type: Article

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