Influence of sintering temperature and pressure on crystallite size and lattice defect structure in nanocrystalline SiC

Journal of Materials Research

Volumn 22, Issue 5, 2007, Pages 1314-1321

  Gubicza, J ^a   Nauyoks, S ^b   Balogh, L ^a   Labar, J ^a,c   Zerda, T W ^b   Ungar T ^a  

^a EÖTVÖS LORÁND UNIVERSITY   (Hungary)

^b TEXAS CHRISTIAN UNIVERSITY   (United States)

^c RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTAL MICROSTRUCTURE; CRYSTALLITE SIZE; DISLOCATIONS (CRYSTALS); GRAIN GROWTH; NANOCRYSTALLINE SILICON; PRESSURE EFFECTS; SINTERING; THERMAL EFFECTS;

SINTERING TEMPERATURE; X-RAY LINE PROFILE ANALYSIS;

SILICON CARBIDE;

EID: 34250176824     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2007.0162     Document Type: Article

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