Integrated silicon nanowire diodes

2006 IEEE Workshop on Microelectronics and Electron Devices, WMED'06

Volumn , Issue , 2006, Pages 47-48

  Jackson, Justin B ^a   Jun, Sun Gon ^a   Kapoor, Divesh ^a   Miller, Mark S ^a  

^a UNIVERSITY OF UTAH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC VAPOR PHASE EPITAXY; GOLD CATALYSTS; SILICON NANOWIRES;

CRYSTAL GROWTH; CURRENT VOLTAGE CHARACTERISTICS; NANOWIRES; SILICON; SUBSTRATES; VAPOR PHASE EPITAXY;

DIODES;

EID: 34250163536     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/WMED.2006.1678303     Document Type: Conference Paper

References (3)

1. Cui, Y., Lieber, C., Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks, Science, Vol. 291, No. 5505, 2001
2. S.-G. Jun, "Growth and properties of silicon and silicon-germanium nanowires," Ph.D. dissertation, University of Utah, April 2006
3. Tang, Q., Kamins, T., Liu, X., Grupp, D., Harris, J., In Situ p-n Junctions and Gated Devices in Titanium-Silicide Nucleated Si Nanowires, Electrochemical and Solid State Letters, Vol. 8, No. 8, 2005