Deep hole traps in as-grown 4H-SiC epilayers investigated by deep level transient spectroscopy

Materials Science Forum

Volumn 527-529, Issue PART 1, 2006, Pages 501-504

  Danno, K ^a   Kimoto, T ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Deep level; DLTS; Hole trap; Intrinsic defect

Indexed keywords

ANNEALING; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON IRRADIATION; EPILAYERS; HOLE TRAPS;

CARBON DISPLACEMENT; DEEP LEVELS; DETECTION LIMIT; INTRINSIC DEFECTS;

SILICON CARBIDE;

EID: 34249936054     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.501     Document Type: Conference Paper

References (9)

1. S. A. Reshanov, O. Klettke, and G. Pensl: Mat. Sc. Forum, Vols. 433-436 (2003) p. 379
2. S. Weiss and R. Kassing: Solid-State Electron. Vol. 31 (1988), p. 1733
3. K. Danno, T. Kimoto, and H. Matsunami: Mat. Sci. Forum, Vols. 483-485 (2005) p. 355
4. K. Danno, T. Kimoto, and H. Matsunami: Appl. Phys. Lett., Vol. 86 (2005) 122104
5. N. T. Son, B. Magnusson, and E. Janzén: Appl. Phys. Lett., Vol. 81 (2002) p. 3945
6. J. L. Hartke: J. Appl. Phys., Vol 39 (1968) p. 4871.
7. A. A. Rempel, W. Sprengel, K. Blaurock, K. J. Reichle, J. Major, and H.-E. Schaefer: Phys. Rev. Lett., Vol. 89 (2002) 185501
8. Z. Zolnai, N. T. Son, C. Hallin, and E. Janzén: J. Appl. Phys., Vol. 96 (2004) p. 2406
9. A. Zywietz, J. Furthmüller, and F. Bechstedt: Phys. Rev. B, Vol 59 (1999) p. 15 167