Memory effect in the current-voltage characteristics of diodes based on PEDOT:PSS

Materials Research Society Symposium Proceedings

Volumn 871, Issue , 2005, Pages 381-386

  Liu, Zhengchun ^a   Xue, Fengliang ^a   Su, Yi ^a   Varahramyan, Kody ^a  

^a LOUISIANA TECH UNIVERSITY   (United States)

Author keywords

Contacts; Memory effect; PEDOT PSS

Indexed keywords

CHARGE INJECTION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; REDOX REACTIONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SHAPE MEMORY EFFECT; THIN FILMS;

ALUMINUM ELECTRODES; CHARGE INJECTION RESISTANCE; CONDUCTION STATES; MEMORY EFFECTS;

SEMICONDUCTOR DIODES;

EID: 34249933577     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-871-i9.35     Document Type: Conference Paper

References (12)

1. A. Turut and F. Koleli, Journal of Applied Physics, 72, 818-819 (1992).
2. M. Chen, D. Nilsson, T. Kugler, and M. Bergren, Applied Physics Letters, 81, 2011-2013 (2002).
3. C. C. Huang, H. F. Meng, and G. K. Ho et al, Applied Physics Letters, 84, 1195-1197 (2004).
4. S. E. Shaheen, R. Radspinner, and N. Peyghambarian et al, Applied Physics Letters, 79, 2996-2998 (2001).
5. J. Lu, N. J. Pinto, and A.G. MacDiarmid, Journal of Applied Physics, 92, 6033-6037 (2002).
6. S. Möller, C. Perlov, W. Jackson, C. Taussig, and S. R. Forrest, Nature, 426, 166-169 (2003).
7. S. Möller, S. R. Forrest, C. Perlov, W. Jackson and C. Taussig, Journal of Applied Physics, 94, 7811-7819 (2003).
8. S. Smith and S. R. Forrest, Applied Physics Letters, 84, 5019-5021 (2004).
9. Z. Liu, Y. Su and K. Varahramyan, Materials Research Society Symposium Proceedings, 814, pp253-257 (2004).
10. S.K. M. Jonsson, W.R. Salaneck, and M. Fahlman, Journal of Materials Research, 18, 1219-1226 (2003).
11. H. S. Majumdar, A. Bandyopadhyay, A. Bolognesi, and A. J. Pal, Journal of Applied Physics, 91, 2433-2437 (2002).
12. T. Johansson, L. A.A. Pettersson, O. Inganäs, Synthetic Metals, 129, 269-274 (2002)