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Volumn 879, Issue , 2005, Pages 37-42

Interactions of Ge atoms with high-κ oxide dielectric surfaces

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; GERMANIUM; HAFNIUM COMPOUNDS; OXIDATION; TUNGSTEN; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 34249930668     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (1)

References (11)
  • 8
    • 34249950884 scopus 로고    scopus 로고
    • Y. Q. Wang, J. H. Chen, W. J. Yoo, Y. C. Yeo, in Materials and Processes for Nonvolatile Memories, edited by A. Claverie, D. Tsoukalas, T-J. King, and J.M. Slaughter (Mater. Res. Soc. Symp. Proc. 830, Warrendale, PA , 2005) D6.3.
    • Y. Q. Wang, J. H. Chen, W. J. Yoo, Y. C. Yeo, in Materials and Processes for Nonvolatile Memories, edited by A. Claverie, D. Tsoukalas, T-J. King, and J.M. Slaughter (Mater. Res. Soc. Symp. Proc. 830, Warrendale, PA , 2005) D6.3.
  • 9
    • 2942668369 scopus 로고    scopus 로고
    • R. Gupta, et al., Appl. Phys. Lett. 84 (21), 4331-4333 (2004).
    • (2004) Appl. Phys. Lett , vol.84 , Issue.21 , pp. 4331-4333
    • Gupta, R.1
  • 10
    • 34249951325 scopus 로고    scopus 로고
    • S. K. Stanley, S. C. Coffee, and J. G. Ekerdt, in Materials and Processes for Nonvolatile Memories, edited by A. Claverie, D. Tsoukalas, T-J. King, and J.M. Slaughter (Mater. Res. Soc. Symp. Proc. 830, Warrendale, PA , 2005), D1.8.
    • S. K. Stanley, S. C. Coffee, and J. G. Ekerdt, in Materials and Processes for Nonvolatile Memories, edited by A. Claverie, D. Tsoukalas, T-J. King, and J.M. Slaughter (Mater. Res. Soc. Symp. Proc. 830, Warrendale, PA , 2005), D1.8.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.