Bonding, splitting and thinning by porous Si in ELTRAN®; SOI-epi wafer™

Materials Research Society Symposium Proceedings

Volumn 681, Issue , 2001, Pages 152-161

  Yamagata, Kenji ^a   Yonehara, Takao ^a  

^a CANON INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTAMINATION; FILM THICKNESS; FINITE ELEMENT METHOD; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS;

AUTOMATIC ANODIZATION APPARATUS; MASS PRODUCTIVELY; SURFACE UNIFORMLY;

POROUS SILICON;

EID: 34249907839     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-681-i8.2     Document Type: Conference Paper

References (5)

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3. T.Yonehara, K.Sakaguchi and N.Sato, Appl. Phys. Lett.64(16),1994, p2108
4. K.Sakaguchi, N.Sato, K.Yamagata, Y.Fujiyama and T.Yonehara, Extended Abstract of the 1994 Int. conf. on SSDM, 1994, p259
5. K.Sakaguchi, K.Yanagita, H.Kurisu, H.Suzuki, K.Ohmi and T.Yonehara, Proc. 195th Int. SOI Symposium, vol.99-3, p.117-121, Electrochemical Society, (1999)